Thermal Diffusivity of a Single Crystal Silicon Wafer n-type Doped with Manganese

Abstract

Abstract - The thermoelectric-silicon based material is gaining enormous interest since silicon is abundant and cheap. The thermoelectric materials operate in direct conversion from heat to electrical energy with no mobile parts. This research explores the development of the n-type electrode from the complete thermoelectric assembly by modifying the thermal properties of n-type silicon plates. The manganese (powder 99.9% pure) was diffused into the films in a vacuum chamber and at C for a period of 14 hours. The thermal diffusivity of the films was measured by the flash method using an apparatus LFA 447 NanoFlash from Netzsch. The average thermal diffusivity measured in the films with no manganese is 0.179 cm2s-1. This value is consistent with values reported in other research jobs. For the films doped with manganese, the average thermal diffusivity was 0.062 cm2s-1. This result reflects a considerable reduction of the thermal diffusivity in silicon films and opens a big window for research developing thermoelectric materials based on conventional materials. Key Terms - Specific Heat, Thermal Conductivity, Thermal Diffusivity, Thermoelectric Material.